Industry Information

By material: Silicon transistors, Germanium transistors

On December 23, 1947, at Bell Labs in Murray Hill, New Jersey, three scientists—Dr. Bardeen, Dr. Brighton, and Dr. Shockley—were conducting experim...

A bipolar junction transistor (BJT) is a three-terminal semiconductor device consisting of two PN junctions formed by the emitter, base, and collec...

For forward bias measurement, the display shows the forward voltage (0.5-0.7V for silicon diodes, 0.2-0.3V for germanium diodes).

Observe the markings on the casing. A diode symbol is usually marked on the casing; the end with the triangular arrow is the positive terminal, and...

There are many types of diodes. Based on the semiconductor material used, they can be divided into germanium diodes (Ge diodes) and silicon diodes ...

A crystal diode is a p-n junction formed by p-type and n-type semiconductors. A space charge layer forms on both sides of the interface, and a buil...

A diode is a two-terminal device composed of a p-type semiconductor (doped with trivalent boron) and an n-type semiconductor (doped with pentavalen...